for lowest Conduction Losses The SPP04N60S5 is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** SPP04N60S5
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 600 V
- **Continuous Drain Current (ID):** 4 A
- **Pulsed Drain Current (IDM):** 16 A
- **Power Dissipation (PD):** 125 W
- **Gate-Source Voltage (VGS):** ±30 V
- **On-Resistance (RDS(on)):** 2.5 Ω (max) at VGS = 10 V
- **Threshold Voltage (VGS(th)):** 3 V (min), 5 V (max)
- **Input Capacitance (Ciss):** 600 pF (typ)
- **Output Capacitance (Coss):** 100 pF (typ)
- **Reverse Transfer Capacitance (Crss):** 30 pF (typ)
- **Turn-On Delay Time (td(on)):** 10 ns (typ)
- **Rise Time (tr):** 50 ns (typ)
- **Turn-Off Delay Time (td(off)):** 60 ns (typ)
- **Fall Time (tf):** 30 ns (typ)
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** TO-220
### **Descriptions and Features:**
- **High Voltage Capability:** Designed for high-voltage applications up to 600 V.
- **Low Gate Charge:** Optimized for fast switching performance.
- **Low On-Resistance:** Provides efficient power handling with minimal conduction losses.
- **Avalanche Rated:** Robust against high-energy transients.
- **Fast Switching Speed:** Suitable for high-frequency applications.
- **Applications:** Used in power supplies, motor control, lighting, and other high-voltage switching circuits.
This information is based solely on the manufacturer's datasheet and technical documentation.
