N-Channel OptiMOS Power Transistor The SPB80N06S2-05 is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** SPB80N06S2-05
- **Technology:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDS):** 60 V
- **Continuous Drain Current (ID):** 80 A
- **Pulsed Drain Current (IDM):** 320 A
- **Power Dissipation (Ptot):** 300 W
- **Gate-Source Voltage (VGS):** ±20 V
- **On-Resistance (RDS(on)):** 5 mΩ (max) at VGS = 10 V
- **Threshold Voltage (VGS(th)):** 2 V (typical)
- **Input Capacitance (Ciss):** 3800 pF (typical)
- **Output Capacitance (Coss):** 900 pF (typical)
- **Reverse Transfer Capacitance (Crss):** 150 pF (typical)
- **Turn-On Delay Time (td(on)):** 13 ns (typical)
- **Turn-Off Delay Time (td(off)):** 49 ns (typical)
- **Operating Temperature Range:** -55°C to +175°C
- **Package:** TO-263 (D2PAK)
### **Descriptions:**
- The SPB80N06S2-05 is a high-performance N-channel MOSFET designed for power switching applications.
- It is optimized for low on-resistance and high current handling, making it suitable for automotive, industrial, and power management applications.
- The device features fast switching characteristics and robust thermal performance.
### **Features:**
- **Low RDS(on):** Ensures minimal conduction losses.
- **High Current Capability:** Supports up to 80 A continuous drain current.
- **Fast Switching Speed:** Enhances efficiency in high-frequency applications.
- **Avalanche Ruggedness:** Provides improved reliability under harsh conditions.
- **Optimized for Automotive Applications:** Compliant with AEC-Q101 standards.
- **Lead-Free & RoHS Compliant:** Environmentally friendly.
This information is based solely on Infineon's datasheet for the SPB80N06S2-05 MOSFET.
