Low Voltage MOSFETs The **SPB160N04S2L-03** is a power MOSFET manufactured by **Infineon Technologies**. Below are its key specifications, descriptions, and features based on factual information:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** SPB160N04S2L-03
- **Technology:** N-Channel MOSFET
- **Drain-Source Voltage (VDS):** 40 V
- **Continuous Drain Current (ID):** 160 A
- **Pulsed Drain Current (IDM):** 640 A
- **Power Dissipation (PD):** 300 W
- **Gate-Source Voltage (VGS):** ±20 V
- **RDS(on) (Max) at VGS = 10 V:** 1.6 mΩ
- **RDS(on) (Max) at VGS = 4.5 V:** 2.2 mΩ
- **Threshold Voltage (VGS(th)):** 2.3 V (typical)
- **Input Capacitance (Ciss):** 6200 pF
- **Output Capacitance (Coss):** 1600 pF
- **Reverse Transfer Capacitance (Crss):** 200 pF
- **Package:** TO-263 (D2PAK)
### **Description:**
The **SPB160N04S2L-03** is a high-performance N-channel power MOSFET designed for applications requiring low on-state resistance and high current handling. It is optimized for power management in automotive, industrial, and switching applications.
### **Features:**
- **Low RDS(on):** Ensures minimal conduction losses.
- **High Current Capability:** Supports up to 160 A continuous drain current.
- **Optimized Switching Performance:** Suitable for high-frequency applications.
- **AEC-Q101 Qualified:** Meets automotive reliability standards.
- **Enhanced Thermal Performance:** TO-263 package provides efficient heat dissipation.
- **Logic-Level Gate Drive:** Can be driven at 4.5 V for improved efficiency.
This information is based on Infineon's official datasheet and product documentation.
