OptiMOS Power-Transistor The SPB100N04S2-04 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Manufacturer:** Infineon
- **Part Number:** SPB100N04S2-04
- **Technology:** N-Channel MOSFET
- **Drain-Source Voltage (VDS):** 40 V
- **Continuous Drain Current (ID):** 100 A
- **Pulsed Drain Current (IDM):** 400 A
- **Power Dissipation (PD):** 300 W
- **Gate-Source Voltage (VGS):** ±20 V
- **On-Resistance (RDS(on)):** 4 mΩ (max) at VGS = 10 V
- **Threshold Voltage (VGS(th)):** 2.0 V (typical)
- **Input Capacitance (Ciss):** 4000 pF (typical)
- **Output Capacitance (Coss):** 1100 pF (typical)
- **Reverse Transfer Capacitance (Crss):** 400 pF (typical)
- **Operating Temperature Range:** -55°C to +175°C
### **Description:**
The SPB100N04S2-04 is a high-performance N-Channel MOSFET designed for power management applications. It offers low on-resistance and high current handling, making it suitable for switching and amplification in automotive, industrial, and consumer electronics.
### **Features:**
- **Low RDS(on):** Ensures minimal conduction losses.
- **High Current Capability:** Supports up to 100 A continuous drain current.
- **Fast Switching:** Optimized for high-frequency applications.
- **Robust Design:** High power dissipation and thermal performance.
- **AEC-Q101 Qualified:** Suitable for automotive applications.
- **Lead-Free & RoHS Compliant:** Environmentally friendly.
This MOSFET is commonly used in DC-DC converters, motor control, and power supply circuits.
