for lowest Conduction Losses The SPB07N60S5 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features based on factual data:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** SPB07N60S5
- **Transistor Type:** N-Channel MOSFET
- **Technology:** CoolMOS™ Power MOSFET
- **Drain-Source Voltage (VDS):** 650 V
- **Continuous Drain Current (ID):** 7 A (at 25°C)
- **Pulsed Drain Current (IDM):** 28 A
- **Power Dissipation (Ptot):** 125 W
- **Gate-Source Voltage (VGS):** ±30 V
- **On-Resistance (RDS(on)):** 0.65 Ω (max) at VGS = 10 V
- **Threshold Voltage (VGS(th)):** 4 V (typical)
- **Input Capacitance (Ciss):** 900 pF (typical)
- **Output Capacitance (Coss):** 60 pF (typical)
- **Reverse Transfer Capacitance (Crss):** 10 pF (typical)
- **Turn-On Delay Time (td(on)):** 15 ns (typical)
- **Turn-Off Delay Time (td(off)):** 55 ns (typical)
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** TO-263 (D²PAK)
### **Descriptions:**
The SPB07N60S5 is a high-voltage N-channel MOSFET from Infineon’s CoolMOS™ series, designed for efficient power switching applications. It offers low on-state resistance, fast switching speeds, and high ruggedness, making it suitable for SMPS (Switched-Mode Power Supplies), lighting, and industrial applications.
### **Features:**
- **High Voltage Capability:** 650 V breakdown voltage for robust performance.
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching:** Optimized for high-frequency applications.
- **CoolMOS™ Technology:** Enhances thermal efficiency and reliability.
- **Avalanche Rugged:** High energy capability in avalanche mode.
- **Lead-Free & RoHS Compliant:** Environmentally friendly.
This information is strictly based on Infineon’s datasheet and technical documentation.
