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SA5200D from PHI,Philips

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SA5200D

Manufacturer: PHI

RF dual gain-stage
Partnumber Manufacturer Quantity Availability
SA5200D PHI 15000 In Stock

Description and Introduction

RF dual gain-stage The part **SA5200D** is manufactured by **PHI (Powerhouse Electronics Inc.)**.  

### **Specifications:**  
- **Type:** Schottky Barrier Diode  
- **Voltage Rating:** 40V  
- **Current Rating:** 5A  
- **Forward Voltage Drop (Vf):** Typically 0.55V at 3A  
- **Reverse Leakage Current (Ir):** 0.5mA at 40V  
- **Operating Temperature Range:** -65°C to +125°C  
- **Package:** DO-214AC (SMA)  

### **Descriptions and Features:**  
- High-efficiency Schottky rectifier  
- Low forward voltage drop for reduced power loss  
- Fast switching capability  
- High surge current capacity  
- RoHS compliant  
- Suitable for power supply, DC-DC converters, and reverse polarity protection applications  

This information is based on the manufacturer's datasheet for the SA5200D diode.

Application Scenarios & Design Considerations

RF dual gain-stage

Alternative Part Number

  • 1N5408 --: Standard 3A 1000V rectifier diode, widely available and often used as a general-purpose replacement for similar axial rectifier diodes.
  • 6A10 --: 6A 1000V rectifier diode in axial package, provides higher current margin and is a common cross for similar power rectifiers.
  • BY255 --: 3A 1300V rectifier diode with higher voltage rating, suitable as a robust alternative in power supply rectification circuits.

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