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S9018LT1 from 长电

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S9018LT1

Manufacturer: 长电

SOT-23 Plastic-Encapsulate Transistors

Partnumber Manufacturer Quantity Availability
S9018LT1 长电 73500 In Stock

Description and Introduction

SOT-23 Plastic-Encapsulate Transistors The part **S9018LT1** is manufactured by **长电 (Changjiang Electronics Technology, CJT)**.  

### **Specifications:**  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** SOT-23  
- **Collector-Base Voltage (VCBO):** 30V  
- **Collector-Emitter Voltage (VCEO):** 20V  
- **Emitter-Base Voltage (VEBO):** 5V  
- **Collector Current (IC):** 100mA  
- **Power Dissipation (PD):** 300mW  
- **Transition Frequency (fT):** 100MHz  
- **DC Current Gain (hFE):** 60-400 (depending on operating conditions)  

### **Descriptions & Features:**  
- Designed for general-purpose amplification and switching applications.  
- High current gain and low saturation voltage.  
- Suitable for low-power circuits in consumer electronics, communication devices, and industrial control systems.  
- Compact SOT-23 package for space-constrained designs.  

For exact performance characteristics, refer to the manufacturer's datasheet.

Application Scenarios & Design Considerations

SOT-23 Plastic-Encapsulate Transistors
Partnumber Manufacturer Quantity Availability
S9018LT1 GUOCHAN 990 In Stock

Description and Introduction

SOT-23 Plastic-Encapsulate Transistors The part **S9018LT1** is manufactured by **GUOCHAN**. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** SOT-23  
- **Collector-Base Voltage (VCBO):** 30V  
- **Collector-Emitter Voltage (VCEO):** 25V  
- **Emitter-Base Voltage (VEBO):** 5V  
- **Collector Current (IC):** 100mA  
- **Power Dissipation (PD):** 300mW  
- **Transition Frequency (fT):** 100MHz  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- The **S9018LT1** is a high-frequency, low-noise NPN transistor designed for amplification and switching applications.  
- It is commonly used in RF (radio frequency) circuits, audio amplifiers, and signal processing.  

### **Features:**  
- **High current gain (hFE):** Typically 60 to 150  
- **Low noise figure** for improved signal clarity  
- **Compact SOT-23 package** for space-constrained designs  
- **Suitable for high-frequency applications** (up to 100MHz)  

This information is strictly factual and sourced from Ic-phoenix technical data files. Let me know if you need further details.

Application Scenarios & Design Considerations

SOT-23 Plastic-Encapsulate Transistors

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