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S9013W from DIODES

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S9013W

Manufacturer: DIODES

Conductor Holdings Limited - NPN Silicon Epitaxial Planar Transistor

Partnumber Manufacturer Quantity Availability
S9013W DIODES 2120 In Stock

Description and Introduction

Conductor Holdings Limited - NPN Silicon Epitaxial Planar Transistor The S9013W is a general-purpose NPN transistor manufactured by DIODES Incorporated.  

### **Specifications:**  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Collector-Base Voltage (VCB):** 40V  
- **Collector-Emitter Voltage (VCE):** 25V  
- **Emitter-Base Voltage (VEB):** 5V  
- **Collector Current (IC):** 500mA  
- **Power Dissipation (PD):** 625mW  
- **DC Current Gain (hFE):** 64 ~ 202 (depending on operating conditions)  
- **Transition Frequency (fT):** 150MHz  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SOT-323 (SC-70)  

### **Descriptions & Features:**  
- Designed for general-purpose amplification and switching applications.  
- High current gain (hFE) with low saturation voltage.  
- Suitable for low-power applications in consumer electronics, signal amplification, and driver circuits.  
- Compact SOT-323 package for space-constrained designs.  
- RoHS compliant and lead-free.  

For detailed electrical characteristics, refer to the official datasheet from DIODES Incorporated.

Application Scenarios & Design Considerations

Conductor Holdings Limited - NPN Silicon Epitaxial Planar Transistor
Partnumber Manufacturer Quantity Availability
S9013W CJ 45000 In Stock

Description and Introduction

Conductor Holdings Limited - NPN Silicon Epitaxial Planar Transistor The S9013W is a transistor manufactured by CJ. Below are the factual details about its specifications, descriptions, and features:

### **Specifications:**  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Collector-Base Voltage (VCBO):** 40V  
- **Collector-Emitter Voltage (VCEO):** 25V  
- **Emitter-Base Voltage (VEBO):** 5V  
- **Collector Current (IC):** 500mA  
- **Power Dissipation (PD):** 625mW  
- **DC Current Gain (hFE):** 64 ~ 202 (depending on operating conditions)  
- **Transition Frequency (fT):** 150MHz  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- The S9013W is a small-signal transistor designed for general-purpose amplification and switching applications.  
- It comes in a TO-92 package, making it suitable for through-hole PCB mounting.  

### **Features:**  
- Low voltage, high current capability  
- High DC current gain  
- Fast switching speed  
- Suitable for audio amplification and driver stages  

For exact performance characteristics, refer to the manufacturer’s datasheet.

Application Scenarios & Design Considerations

Conductor Holdings Limited - NPN Silicon Epitaxial Planar Transistor

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