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S9012-G from Samsung

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S9012-G

Manufacturer: Samsung

PNP Silicon Transistors

Partnumber Manufacturer Quantity Availability
S9012-G,S9012G Samsung 10000 In Stock

Description and Introduction

PNP Silicon Transistors The S9012-G is a semiconductor diode manufactured by Samsung. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Samsung  
- **Part Number:** S9012-G  
- **Type:** PNP Transistor  
- **Package:** TO-92  
- **Collector-Base Voltage (VCBO):** -30V  
- **Collector-Emitter Voltage (VCEO):** -25V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -500mA  
- **Power Dissipation (Ptot):** 625mW  
- **Transition Frequency (fT):** 150MHz  
- **DC Current Gain (hFE):** 60-400  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions and Features:**  
- Designed for general-purpose amplification and switching applications.  
- High current gain (hFE) range for improved performance.  
- Low saturation voltage for efficient switching.  
- Compact TO-92 package for easy PCB mounting.  
- Suitable for use in consumer electronics, audio amplifiers, and signal processing circuits.  

This information is based solely on available technical documentation for the S9012-G transistor from Samsung.

Application Scenarios & Design Considerations

PNP Silicon Transistors
Partnumber Manufacturer Quantity Availability
S9012-G,S9012G PH 1040 In Stock

Description and Introduction

PNP Silicon Transistors The S9012-G is a PNP bipolar junction transistor (BJT) manufactured by PH (likely referring to a specific manufacturer, though the exact company name may vary). Below are the factual specifications, descriptions, and features based on available knowledge:

### **Specifications:**  
- **Type:** PNP Transistor  
- **Collector-Base Voltage (VCBO):** -40V  
- **Collector-Emitter Voltage (VCEO):** -25V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -500mA  
- **Power Dissipation (Ptot):** 625mW  
- **Junction Temperature (Tj):** 150°C  
- **DC Current Gain (hFE):** Typically 60-300 (varies by batch)  
- **Transition Frequency (fT):** ~150MHz  

### **Descriptions:**  
- The S9012-G is a general-purpose PNP transistor used in amplification and switching applications.  
- It is housed in a TO-92 package, making it compact and suitable for through-hole PCB mounting.  
- Commonly used in low-power circuits, signal amplification, and driver stages.  

### **Features:**  
- Low voltage, high current capability.  
- High current gain (hFE) for improved efficiency in amplification.  
- Fast switching speed for signal processing.  
- Reliable performance in consumer electronics and small electronic projects.  

For exact details, always refer to the manufacturer's datasheet.

Application Scenarios & Design Considerations

PNP Silicon Transistors

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