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SMA6J12A-TR from ST,ST Microelectronics

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SMA6J12A-TR

Manufacturer: ST

High junction temperature Transil

Partnumber Manufacturer Quantity Availability
SMA6J12A-TR,SMA6J12ATR ST 55000 In Stock

Description and Introduction

High junction temperature Transil The SMA6J12A-TR is a TVS diode manufactured by STMicroelectronics (ST). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Type:** Uni-directional TVS Diode  
- **Peak Pulse Power (PPP):** 600W (10/1000μs)  
- **Breakdown Voltage (VBR):** 13.3V (min)  
- **Standoff Voltage (VRWM):** 12V  
- **Clamping Voltage (VC):** 19.9V at 1A  
- **Maximum Reverse Leakage Current (IR):** 1μA at VRWM  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SMA (DO-214AC)  

### **Descriptions:**  
- Designed to protect sensitive electronics from voltage transients and ESD events.  
- Suitable for high-speed data lines and power supply protection.  
- Compliant with IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT), and IEC 61000-4-5 (Surge) standards.  

### **Features:**  
- Low clamping voltage for effective transient suppression.  
- Fast response time (<1ns).  
- RoHS-compliant and halogen-free.  
- High surge capability.  

This information is based solely on STMicroelectronics' official documentation.

Application Scenarios & Design Considerations

High junction temperature Transil

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