N-Channel 30-V (D-S) MOSFET The SIS406DN is a Schottky diode manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** Vishay
- **Part Number:** SIS406DN
- **Type:** Schottky Diode
- **Package:** PowerDI 123
- **Configuration:** Dual Common Cathode
- **Maximum Average Forward Current (IF(AV)):** 4 A per diode
- **Peak Forward Surge Current (IFSM):** 100 A (non-repetitive)
- **Maximum Reverse Voltage (VRRM):** 60 V
- **Forward Voltage Drop (VF):** 0.55 V (typical at 4 A)
- **Reverse Leakage Current (IR):** 0.5 mA (typical at 60 V)
- **Operating Junction Temperature (TJ):** -55°C to +150°C
- **Storage Temperature Range (TSTG):** -55°C to +150°C
### **Descriptions:**
- The SIS406DN is a dual Schottky barrier diode in a PowerDI 123 package, designed for high-efficiency rectification in power applications.
- It features low forward voltage drop and fast switching characteristics, making it suitable for switching power supplies, DC-DC converters, and reverse polarity protection.
### **Features:**
- **Low Forward Voltage Drop:** Enhances efficiency in power conversion.
- **Fast Switching:** Minimizes switching losses in high-frequency applications.
- **High Surge Current Capability:** Suitable for transient conditions.
- **Common Cathode Configuration:** Simplifies circuit design in dual-diode applications.
- **Compact PowerDI 123 Package:** Optimized for space-constrained PCB layouts.
For detailed application guidelines or testing conditions, refer to Vishay’s official datasheet.
