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SIR492DP-T1-GE3 from VISHAY

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SIR492DP-T1-GE3

Manufacturer: VISHAY

N-Channel 12-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SIR492DP-T1-GE3,SIR492DPT1GE3 VISHAY 282 In Stock

Description and Introduction

N-Channel 12-V (D-S) MOSFET The **SIR492DP-T1-GE3** is a P-channel MOSFET manufactured by **Vishay**. Below are its key specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Type:** P-Channel MOSFET  
- **Package:** PowerPAK® SO-8  
- **Drain-Source Voltage (VDSS):** -30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -5.8A  
- **Pulsed Drain Current (IDM):** -23A  
- **RDS(on) (Max) @ VGS = -10V:** 0.042Ω  
- **RDS(on) (Max) @ VGS = -4.5V:** 0.055Ω  
- **Power Dissipation (PD):** 2.5W  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions & Features:**  
- **Low On-Resistance:** Optimized for power efficiency in switching applications.  
- **High-Speed Switching:** Suitable for high-frequency applications.  
- **PowerPAK® SO-8 Package:** Compact footprint with improved thermal performance.  
- **AEC-Q101 Qualified:** Meets automotive industry reliability standards.  
- **Logic-Level Gate Drive:** Compatible with lower gate drive voltages.  
- **Applications:** Used in power management, DC-DC converters, motor control, and load switching.  

This information is strictly based on the manufacturer's datasheet and specifications.

Application Scenarios & Design Considerations

N-Channel 12-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SIR492DP-T1-GE3,SIR492DPT1GE3 VIS 1068 In Stock

Description and Introduction

N-Channel 12-V (D-S) MOSFET The **SIR492DP-T1-GE3** is a **P-channel MOSFET** manufactured by **Vishay Siliconix**. Below are the factual details about its specifications, descriptions, and features:

### **Manufacturer:**  
- **Vishay Siliconix (VIS)**  

### **Part Number:**  
- **SIR492DP-T1-GE3**  

### **Description:**  
- **Type:** P-Channel MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Package:** PowerPAK® SO-8  

### **Key Features:**  
- **Drain-Source Voltage (VDS):** -30 V  
- **Continuous Drain Current (ID):** -9.5 A  
- **RDS(on) (Max):**  
  - 13 mΩ @ VGS = -10 V  
  - 18 mΩ @ VGS = -4.5 V  
- **Gate-Source Voltage (VGS):** ±20 V  
- **Power Dissipation (PD):** 2.5 W  
- **Operating Temperature Range:** -55°C to +150°C  

### **Applications:**  
- Power management in portable devices  
- DC-DC converters  
- Load switching  

### **Package Details:**  
- **Mounting Type:** Surface Mount  
- **Package/Case:** PowerPAK® SO-8  

This information is based on Vishay Siliconix's official datasheet for the **SIR492DP-T1-GE3**.

Application Scenarios & Design Considerations

N-Channel 12-V (D-S) MOSFET

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