IC Phoenix logo

Home ›  S  › S29 > SIR464DP-T1-GE3

SIR464DP-T1-GE3 from VISHAY

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

SIR464DP-T1-GE3

Manufacturer: VISHAY

N-Channel 30-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SIR464DP-T1-GE3,SIR464DPT1GE3 VISHAY 1747 In Stock

Description and Introduction

N-Channel 30-V (D-S) MOSFET The **SIR464DP-T1-GE3** is a **P-Channel MOSFET** manufactured by **Vishay**. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Type:** P-Channel MOSFET  
- **Technology:** Silicon (Si)  
- **Drain-Source Voltage (VDSS):** -40V  
- **Continuous Drain Current (ID):** -6.3A  
- **RDS(ON) (Max) @ VGS:**  
  - 0.065Ω @ -10V  
  - 0.085Ω @ -4.5V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** **PowerPAK® SO-8**  

### **Descriptions & Features:**  
- **Low On-Resistance (RDS(ON)):** Enhances efficiency in power applications.  
- **Optimized for High-Speed Switching:** Suitable for DC-DC converters and power management.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  
- **AEC-Q101 Qualified:** Ensures reliability for automotive applications.  
- **Advanced PowerPAK® SO-8 Package:** Provides improved thermal performance and space-saving design.  

This MOSFET is commonly used in **power switching, load switching, and battery management** applications.  

Would you like additional details?

Application Scenarios & Design Considerations

N-Channel 30-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SIR464DP-T1-GE3,SIR464DPT1GE3 VISHAY 6645 In Stock

Description and Introduction

N-Channel 30-V (D-S) MOSFET The **SIR464DP-T1-GE3** is a power MOSFET manufactured by **Vishay**. Below are its key specifications, descriptions, and features based on the available knowledge:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SIR464DP-T1-GE3  
- **Transistor Type:** N-Channel  
- **Technology:** MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 18A  
- **RDS(ON) (Max) @ VGS = 10V:** 0.018Ω  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 45W  
- **Package:** PowerPAK® SO-8 (Small Outline-8)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions & Features:**  
- Designed for **high-efficiency power switching** applications.  
- **Low on-resistance (RDS(ON))** for reduced conduction losses.  
- **Fast switching performance** suitable for DC-DC converters, motor control, and power management.  
- **Avalanche energy rated** for ruggedness in harsh conditions.  
- **Lead-free and RoHS compliant** for environmental safety.  
- **Optimized for low gate charge (QG)** to improve efficiency in high-frequency applications.  

This information is based strictly on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

N-Channel 30-V (D-S) MOSFET

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips