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SIR402DP-T1-GE3 from VISHAY

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SIR402DP-T1-GE3

Manufacturer: VISHAY

N-Channel 30-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SIR402DP-T1-GE3,SIR402DPT1GE3 VISHAY 650 In Stock

Description and Introduction

N-Channel 30-V (D-S) MOSFET The **SIR402DP-T1-GE3** is a **P-Channel MOSFET** manufactured by **Vishay**.  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Type:** P-Channel MOSFET  
- **Package:** PowerPAK® SO-8  
- **Drain-Source Voltage (VDSS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Drain Current (ID):** -5.8A (continuous)  
- **RDS(on) (Max):** 0.042Ω @ VGS = -4.5V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions and Features:**  
- **Low On-Resistance:** Optimized for high efficiency in power management applications.  
- **PowerPAK® SO-8 Package:** Compact footprint with improved thermal performance.  
- **AEC-Q101 Qualified:** Suitable for automotive applications.  
- **Lead (Pb)-Free & RoHS Compliant:** Meets environmental standards.  
- **Fast Switching Speed:** Enhances performance in switching circuits.  

This MOSFET is commonly used in **DC-DC converters, load switches, and power management systems**.  

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Application Scenarios & Design Considerations

N-Channel 30-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SIR402DP-T1-GE3,SIR402DPT1GE3 VISHAY 3000 In Stock

Description and Introduction

N-Channel 30-V (D-S) MOSFET The **SIR402DP-T1-GE3** is a P-Channel MOSFET manufactured by **Vishay**. Below are its key specifications, descriptions, and features based on factual data:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Category:** MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)  
- **Type:** P-Channel  
- **Drain-Source Voltage (VDSS):** -20V  
- **Continuous Drain Current (ID):** -5.5A  
- **RDS(ON) (Max):** 0.042Ω @ VGS = -4.5V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Power Dissipation (PD):** 2.5W  
- **Package:** PowerPAK® SO-8  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions & Features:**  
- Designed for **high-efficiency power management** in applications such as load switching, DC-DC conversion, and battery protection.  
- **Low on-resistance (RDS(ON))** for reduced conduction losses.  
- **Optimized for high-speed switching** in portable and compact devices.  
- **PowerPAK® SO-8 package** enhances thermal performance and power handling.  
- **AEC-Q101 qualified** for automotive applications (if applicable).  
- **Lead (Pb)-free and RoHS compliant.**  

For exact datasheet details, refer to Vishay's official documentation.

Application Scenarios & Design Considerations

N-Channel 30-V (D-S) MOSFET

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