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SIC769ACD-T1-GE3 from VISHAY

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SIC769ACD-T1-GE3

Manufacturer: VISHAY

Integrated DrMOS Power Stage

Partnumber Manufacturer Quantity Availability
SIC769ACD-T1-GE3,SIC769ACDT1GE3 VISHAY 245 In Stock

Description and Introduction

Integrated DrMOS Power Stage The **SIC769ACD-T1-GE3** is a **N-Channel MOSFET** manufactured by **VISHAY**.  

### **Specifications:**  
- **Voltage Rating (VDS):** 30V  
- **Current Rating (ID):** 6.5A (continuous)  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 0.045Ω (max) @ VGS = 10V  
- **Gate Threshold Voltage (VGS(th)):** 1V (min) / 2.5V (max)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Package:** **PowerPAK® SC-70-6L**  

### **Descriptions & Features:**  
- **Low On-Resistance** for efficient power handling.  
- **Fast Switching Speed** for high-frequency applications.  
- **Compact SC-70-6L Package** for space-constrained designs.  
- **AEC-Q101 Qualified** for automotive applications.  
- **Lead (Pb)-Free & RoHS Compliant**.  

This MOSFET is commonly used in **power management, load switching, and DC-DC conversion** applications.  

(Source: Vishay datasheet)

Application Scenarios & Design Considerations

Integrated DrMOS Power Stage

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