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SIC762CD-T1-GE3 from VISHAY

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SIC762CD-T1-GE3

Manufacturer: VISHAY

Integrated DrMOS Power Stage

Partnumber Manufacturer Quantity Availability
SIC762CD-T1-GE3,SIC762CDT1GE3 VISHAY 20000 In Stock

Description and Introduction

Integrated DrMOS Power Stage The **SIC762CD-T1-GE3** is a power MOSFET manufactured by **Vishay**. Below are the key specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **Vishay**  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Voltage Rating (VDS):** 60V  
- **Current Rating (ID):** 50A (continuous)  
- **RDS(ON) (Max):** 6.2mΩ @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 125W  
- **Package:** PowerPAK® SO-8 (Single)  
- **Operating Temperature Range:** -55°C to +175°C  

### **Descriptions & Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power switching applications.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Energy Rated:** Enhanced ruggedness for reliable performance.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  
- **Applications:** Used in power management, DC-DC converters, motor control, and other high-current switching circuits.  

This information is strictly based on the manufacturer's datasheet and product documentation.

Application Scenarios & Design Considerations

Integrated DrMOS Power Stage

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