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SI9955DY from SILICONI

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SI9955DY

Manufacturer: SILICONI

Dual N-Channel Enhancement Mode MOSFET

Partnumber Manufacturer Quantity Availability
SI9955DY SILICONI 439 In Stock

Description and Introduction

Dual N-Channel Enhancement Mode MOSFET The part **SI9955DY** is manufactured by **SILICONIX (now part of Vishay)**.  

### **Specifications:**  
- **Type:** Dual N-Channel MOSFET  
- **Voltage Rating (VDS):** 20V  
- **Current Rating (ID):** 6.5A (per channel)  
- **RDS(ON):** 0.035Ω (typical at VGS = 10V)  
- **Gate Threshold Voltage (VGS(th)):** 1V (typical)  
- **Power Dissipation (PD):** 2.5W (per channel)  
- **Package:** SOIC-8  

### **Descriptions and Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance for reduced conduction losses.  
- Fast switching performance.  
- Suitable for DC-DC converters, motor control, and load switching.  
- Logic-level gate drive compatibility.  

Would you like additional details on any specific parameter?

Application Scenarios & Design Considerations

Dual N-Channel Enhancement Mode MOSFET

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