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SI9953DY from SI

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SI9953DY

Manufacturer: SI

Dual P-Channel Enhancement Mode MOSFET
Partnumber Manufacturer Quantity Availability
SI9953DY SI 10000 In Stock

Description and Introduction

Dual P-Channel Enhancement Mode MOSFET The part **SI9953DY** is manufactured by **Vishay Siliconix**.  

### **Specifications:**  
- **Type:** Dual N-Channel MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 6.3A (per MOSFET)  
- **RDS(on) (Max):** 0.028Ω (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W (per MOSFET)  
- **Package:** SO-8  

### **Descriptions & Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Optimized for synchronous buck converters and motor control.  
- TrenchFET® Gen III technology enhances switching performance.  
- Lead (Pb)-free and RoHS-compliant.  

For detailed datasheets, refer to Vishay Siliconix documentation.

Application Scenarios & Design Considerations

Dual P-Channel Enhancement Mode MOSFET

Alternative Part Number

  • FDS8958A --: Dual N-channel MOSFET in SO-8 with comparable RDS(on) and voltage rating, a common drop-in for dual MOSFET applications.
  • IRF7341 --: Dual N-channel MOSFET in SO-8 with similar current and voltage ratings, widely used as a substitute in switching circuits.
  • NTMD4840NR2 --: Dual N-channel MOSFET in SO-8 with comparable on-resistance and ratings, suitable for load switching and power management.

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