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SI9934BDY-T1-E3 from VISHAY

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SI9934BDY-T1-E3

Manufacturer: VISHAY

Dual P-Channel 2.5-V (G-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI9934BDY-T1-E3,SI9934BDYT1E3 VISHAY 319 In Stock

Description and Introduction

Dual P-Channel 2.5-V (G-S) MOSFET The SI9934BDY-T1-E3 is a dual N-channel MOSFET from Vishay. Here are its key specifications, descriptions, and features:

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI9934BDY-T1-E3  
- **Configuration:** Dual N-Channel  
- **Drain-Source Voltage (VDSS):** 20V  
- **Continuous Drain Current (ID):** 5.3A (per channel)  
- **RDS(ON) (Max):** 0.035Ω (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±12V  
- **Power Dissipation (PD):** 2.5W  
- **Package:** SO-8  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance for reduced conduction losses.  
- Suitable for synchronous buck converters, load switches, and motor control.  

### **Features:**  
- **Dual N-Channel MOSFET:** Two independent MOSFETs in a single package.  
- **Low RDS(ON):** Enhances efficiency in power applications.  
- **Fast Switching Speed:** Optimized for high-frequency switching.  
- **SO-8 Package:** Compact and suitable for space-constrained designs.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

For detailed datasheets, refer to Vishay's official documentation.

Application Scenarios & Design Considerations

Dual P-Channel 2.5-V (G-S) MOSFET

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