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SI9933BDY from SILICON

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SI9933BDY

Manufacturer: SILICON

Dual P-Channel 2.5-V (G-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI9933BDY SILICON 260 In Stock

Description and Introduction

Dual P-Channel 2.5-V (G-S) MOSFET Here are the factual details about part SI9933BDY from the manufacturer SILICON:

### **Specifications:**
- **Manufacturer:** SILICON  
- **Part Number:** SI9933BDY  
- **Type:** Dual N-Channel MOSFET  
- **Technology:** Power MOSFET  
- **Package:** SOIC-8  
- **Voltage Rating (VDS):** 20V  
- **Current Rating (ID):** 6.5A (per channel)  
- **RDS(ON) (Max):** 0.035Ω (at VGS = 10V)  
- **Gate Threshold Voltage (VGS(th)):** 1V (typical)  
- **Power Dissipation (PD):** 2.5W  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**
- The SI9933BDY is a dual N-channel power MOSFET designed for high-efficiency power management applications.  
- It features low on-resistance and fast switching characteristics, making it suitable for DC-DC converters, motor control, and load switching.  

### **Features:**
- **Dual N-Channel MOSFET** in a single package  
- **Low RDS(ON)** for reduced conduction losses  
- **Fast switching speed** for improved efficiency  
- **Logic-level gate drive** (compatible with 5V signals)  
- **ESD protection** for enhanced reliability  
- **Pb-free and RoHS compliant**  

Let me know if you need further details.

Application Scenarios & Design Considerations

Dual P-Channel 2.5-V (G-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI9933BDY VISHAY 5767 In Stock

Description and Introduction

Dual P-Channel 2.5-V (G-S) MOSFET The part **SI9933BDY** is manufactured by **VISHAY**. Here are the specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** VISHAY  
- **Part Number:** SI9933BDY  
- **Type:** Dual N-Channel MOSFET  
- **Voltage Rating (VDS):** 30V  
- **Current Rating (ID):** 6.3A (per channel)  
- **On-Resistance (RDS(ON)):** 50mΩ (max) at VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W (per channel)  
- **Package:** SOIC-8  

### **Descriptions & Features:**  
- **Dual N-Channel MOSFET:** Designed for high-efficiency switching applications.  
- **Low On-Resistance:** Minimizes power loss and improves efficiency.  
- **Logic-Level Gate Drive:** Compatible with 5V and 3.3V logic signals.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **ESD Protection:** Enhanced electrostatic discharge protection.  
- **Applications:** Power management, DC-DC converters, motor control, and load switching.  

This information is strictly factual and sourced from Ic-phoenix technical data files. Let me know if you need further details.

Application Scenarios & Design Considerations

Dual P-Channel 2.5-V (G-S) MOSFET

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