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SI9803DY from SILI

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SI9803DY

Manufacturer: SILI

20-V (D-S) Single

Partnumber Manufacturer Quantity Availability
SI9803DY SILI 181 In Stock

Description and Introduction

20-V (D-S) Single The part **SI9803DY** is manufactured by **SILI (Siliconix Inc.)**.  

### **Specifications:**  
- **Type:** N-Channel MOSFET  
- **Voltage (Vds):** 30V  
- **Current (Id):** 9A  
- **Power Dissipation (Pd):** 2.5W  
- **Rds(on):** 0.028Ω (max) at Vgs = 10V  
- **Gate Threshold Voltage (Vgs(th)):** 1V (min), 2V (max)  
- **Gate-Source Voltage (Vgs):** ±20V  
- **Package:** SO-8  

### **Descriptions and Features:**  
- **Low On-Resistance (Rds(on))** for efficient power handling.  
- **Fast Switching Speed** suitable for high-frequency applications.  
- **Low Gate Charge** for improved switching efficiency.  
- **Avalanche Energy Rated** for rugged performance.  
- **Logic-Level Gate Drive** capability (compatible with 5V drive).  
- **Applications:** Power management, DC-DC converters, motor control, and load switching.  

This information is based on factual data from the manufacturer's specifications.

Application Scenarios & Design Considerations

20-V (D-S) Single
Partnumber Manufacturer Quantity Availability
SI9803DY VISHAY 315 In Stock

Description and Introduction

20-V (D-S) Single The part SI9803DY is manufactured by Vishay. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI9803DY  
- **Type:** Dual N-Channel MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 6.3A (per MOSFET)  
- **RDS(ON) (Max):** 0.035Ω (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W (per MOSFET)  
- **Package:** SOIC-8  

### **Descriptions:**  
The SI9803DY is a dual N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance (RDS(ON)) and fast switching characteristics, making it suitable for DC-DC converters, load switches, and motor control.  

### **Features:**  
- **Low RDS(ON):** Enhances power efficiency.  
- **TrenchFET® Gen III Technology:** Provides high performance in a compact package.  
- **Dual N-Channel Configuration:** Allows for space-saving designs.  
- **Fast Switching Speed:** Improves efficiency in high-frequency applications.  
- **SOIC-8 Package:** Compact and suitable for surface-mount applications.  

This information is based solely on the provided knowledge base. No additional suggestions or guidance are included.

Application Scenarios & Design Considerations

20-V (D-S) Single

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