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SI7882DP from VISHAY

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SI7882DP

Manufacturer: VISHAY

N-Channel Reduced Qg, Fast Switching MOSFET
Partnumber Manufacturer Quantity Availability
SI7882DP VISHAY 180 In Stock

Description and Introduction

N-Channel Reduced Qg, Fast Switching MOSFET **Manufacturer:** VISHAY  

**Part Number:** SI7882DP  

**Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 50A  
- **Pulsed Drain Current (IDM):** 200A  
- **Power Dissipation (PD):** 110W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 4.5mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1V (min) to 2.5V (max)  
- **Input Capacitance (Ciss):** 3000pF (typ)  
- **Package:** TO-252 (DPAK)  

**Descriptions and Features:**  
- High-performance N-Channel MOSFET optimized for power switching applications.  
- Low on-resistance for reduced conduction losses.  
- Fast switching speed for improved efficiency.  
- Suitable for DC-DC converters, motor control, and power management circuits.  
- Lead-free and RoHS compliant.  

(Information sourced from VISHAY datasheets.)

Application Scenarios & Design Considerations

N-Channel Reduced Qg, Fast Switching MOSFET

Alternative Part Number

  • CSD17501Q5A --: N-channel NexFET in a 5x6 QFN (SON 5x6) with comparable RDS(on) and voltage rating, suitable drop-in for power switching applications.
  • BSC0902NSI --: OptiMOS N-channel MOSFET in SuperSO8 (PG-TDSON-8) with similar 30V class and low on-resistance, widely used as an equivalent in DC-DC converters.
  • AON6758 --: 30V N-channel MOSFET in DFN5x6 package with comparable current and RDS(on) ratings, a common cross-reference for PowerPAK-style parts.

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