IC Phoenix logo

Home ›  S  › S27 > SI7454DP-T1-E3

SI7454DP-T1-E3 from X

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

SI7454DP-T1-E3

Manufacturer: X

N-Channel 100-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI7454DP-T1-E3,SI7454DPT1E3 X 2500 In Stock

Description and Introduction

N-Channel 100-V (D-S) MOSFET The **SI7454DP-T1-E3** is a P-channel MOSFET manufactured by **Vishay Siliconix**. Here are its key specifications, descriptions, and features:

### **Specifications:**
- **Drain-Source Voltage (VDS):** -30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -4.3A  
- **Pulsed Drain Current (IDM):** -17A  
- **Power Dissipation (PD):** 2.5W  
- **RDS(ON) (Max):** 0.1Ω @ VGS = -10V, ID = -4.3A  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**
- **Package:** PowerPAK® SO-8  
- **Technology:** TrenchFET® Gen III  
- **Polarity:** P-Channel  
- **Application:** Power management in portable devices, load switching, and battery protection.  

### **Features:**
- **Low On-Resistance (RDS(ON))** for efficient power handling.  
- **Fast Switching Speed** for improved performance.  
- **Lead-Free & RoHS Compliant.**  
- **AEC-Q101 Qualified** for automotive applications.  
- **Optimized for High-Density Designs** due to compact PowerPAK® package.  

This MOSFET is commonly used in DC-DC converters, power supplies, and motor control circuits.

Application Scenarios & Design Considerations

N-Channel 100-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI7454DP-T1-E3,SI7454DPT1E3 VISHAY 500 In Stock

Description and Introduction

N-Channel 100-V (D-S) MOSFET The SI7454DP-T1-E3 is a P-Channel MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI7454DP-T1-E3  
- **Transistor Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -10A  
- **Pulsed Drain Current (IDM):** -40A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 28mΩ (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1V to -2V  
- **Package:** PowerPAK® SO-8  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions and Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power management.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **PowerPAK® SO-8 Package:** Compact footprint with improved thermal performance.  
- **AEC-Q101 Qualified:** Meets automotive reliability standards.  
- **Applications:** Power management in DC-DC converters, load switches, motor control, and battery protection circuits.  

This information is based solely on the manufacturer's datasheet.

Application Scenarios & Design Considerations

N-Channel 100-V (D-S) MOSFET

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips