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SI7415DN from VISHAY

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SI7415DN

Manufacturer: VISHAY

P-Channel 60-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI7415DN VISHAY 205 In Stock

Description and Introduction

P-Channel 60-V (D-S) MOSFET The part **SI7415DN** is manufactured by **Vishay**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Type:** N-Channel MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 30A  
- **RDS(on) (Max) @ VGS = 10V:** 4.5mΩ  
- **RDS(on) (Max) @ VGS = 4.5V:** 6.5mΩ  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 3.1W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Descriptions:**  
The **SI7415DN** is a **30V N-Channel MOSFET** utilizing **Vishay’s TrenchFET® Gen III technology**, optimized for high-efficiency power switching applications. It features **low on-resistance** and **high current handling** in a compact **PowerPAK® SO-8 package**, making it suitable for DC-DC converters, motor control, and power management systems.  

### **Features:**  
- **Low RDS(on)** for reduced conduction losses  
- **Optimized for high-frequency switching**  
- **AEC-Q101 qualified** (for automotive applications)  
- **Lead-free and RoHS compliant**  
- **Improved thermal performance** due to PowerPAK® package  

This information is based solely on the provided knowledge base. Let me know if you need any additional details.

Application Scenarios & Design Considerations

P-Channel 60-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI7415DN SI 44 In Stock

Description and Introduction

P-Channel 60-V (D-S) MOSFET The part **SI7415DN** is a **P-Channel MOSFET** manufactured by **Vishay Siliconix**.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** -30V  
- **Continuous Drain Current (ID):** -6.3A (at TC = 25°C)  
- **On-Resistance (RDS(on)):** 0.035Ω (max) at VGS = -10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W (at TA = 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** **SO-8 (D2PAK)**  

### **Features:**  
- **Advanced TrenchFET® technology** for low RDS(on)  
- **High power and current handling capability**  
- **Avalanche energy specified** for ruggedness  
- **Lead (Pb)-free and RoHS compliant**  

### **Applications:**  
- **Power management** in DC-DC converters  
- **Load switching** in automotive and industrial systems  
- **Battery protection circuits**  

This MOSFET is designed for **high-efficiency power switching** applications.  

(Source: Vishay Siliconix datasheet for SI7415DN.)

Application Scenarios & Design Considerations

P-Channel 60-V (D-S) MOSFET

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