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SI6966DQ from FAIRC,Fairchild Semiconductor

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SI6966DQ

Manufacturer: FAIRC

Dual N-Channel 2.5-V (G-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI6966DQ FAIRC 2500 In Stock

Description and Introduction

Dual N-Channel 2.5-V (G-S) MOSFET The part **SI6966DQ** is manufactured by **FAIRC**.  

### **Specifications:**  
- **Manufacturer:** FAIRC  
- **Part Number:** SI6966DQ  
- **Type:** Power MOSFET  
- **Package:** D2PAK (TO-263)  
- **Voltage Rating:** 30V  
- **Current Rating:** 60A  
- **RDS(ON):** 4.5mΩ (typical)  
- **Gate Charge (Qg):** 60nC (typical)  
- **Operating Temperature Range:** -55°C to +175°C  

### **Descriptions:**  
The SI6966DQ is a high-performance N-channel MOSFET designed for power management applications, offering low on-resistance and high current handling capabilities.  

### **Features:**  
- Low RDS(ON) for reduced conduction losses  
- High current capability (60A)  
- Fast switching performance  
- Robust thermal characteristics  
- Suitable for DC-DC converters, motor control, and power switching applications  

Let me know if you need further details.

Application Scenarios & Design Considerations

Dual N-Channel 2.5-V (G-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI6966DQ VISHAY 184 In Stock

Description and Introduction

Dual N-Channel 2.5-V (G-S) MOSFET The part **SI6966DQ** is manufactured by **Vishay**.  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Type:** N-Channel 30 V (D-S) MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Drain-Source Voltage (VDSS):** 30 V  
- **Continuous Drain Current (ID):** 30 A  
- **RDS(ON) (Max) @ VGS = 10 V:** 5.5 mΩ  
- **RDS(ON) (Max) @ VGS = 4.5 V:** 7.5 mΩ  
- **Gate-Source Voltage (VGS):** ±20 V  
- **Power Dissipation (PD):** 3.1 W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Descriptions and Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power management.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **TrenchFET® Gen III Technology:** Enhances performance with lower RDS(ON) and gate charge.  
- **PowerPAK® SO-8 Package:** Compact footprint with improved thermal performance.  
- **Applications:** Used in DC-DC converters, motor control, power management, and load switching.  

Would you like any additional details?

Application Scenarios & Design Considerations

Dual N-Channel 2.5-V (G-S) MOSFET

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