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SI6963DQ from VISHAY

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SI6963DQ

Manufacturer: VISHAY

Dual P-Channel 2.5-V (G-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI6963DQ VISHAY 570 In Stock

Description and Introduction

Dual P-Channel 2.5-V (G-S) MOSFET **Manufacturer:** VISHAY  

**Part Number:** SI6963DQ  

**Specifications:**  
- **Type:** Dual N-Channel 30 V (D-S) MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Drain-Source Voltage (VDSS):** 30 V  
- **Continuous Drain Current (ID):** 5.3 A (per MOSFET)  
- **RDS(on) (Max):** 0.035 Ω (at VGS = 10 V)  
- **Gate-Source Voltage (VGS):** ±20 V  
- **Power Dissipation (PD):** 2.5 W (per MOSFET)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

**Descriptions and Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Optimized for synchronous buck converters and other switching applications.  
- TrenchFET® Gen III technology ensures high performance and reliability.  
- Lead-free and RoHS compliant.  
- Suitable for automotive, industrial, and consumer electronics.  

(Note: Always verify datasheet details for exact specifications.)

Application Scenarios & Design Considerations

Dual P-Channel 2.5-V (G-S) MOSFET

Alternative Part Number

  • FDS6690A --: Dual N-channel MOSFET in SO-8 with comparable RDS(on) and voltage rating, widely available and pin-compatible.
  • IRF7319 --: Dual N-channel MOSFET in SO-8 with similar current and voltage ratings, suitable drop-in replacement for switching applications.
  • NTMS4816NR2G --: Dual N-channel MOSFET in SO-8 offering comparable on-resistance and gate charge, good alternative when SI6963DQ is unavailable.

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