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SI6926ADQ-T1-E3 from VISHAY

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SI6926ADQ-T1-E3

Manufacturer: VISHAY

Dual N-Channel 2.5-V G-S MOSFET

Partnumber Manufacturer Quantity Availability
SI6926ADQ-T1-E3,SI6926ADQT1E3 VISHAY 6000 In Stock

Description and Introduction

Dual N-Channel 2.5-V G-S MOSFET The SI6926ADQ-T1-E3 is a P-channel MOSFET manufactured by Vishay. Here are its key specifications, descriptions, and features:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI6926ADQ-T1-E3  
- **Transistor Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -6.3A  
- **Pulsed Drain Current (IDM):** -25A  
- **On-Resistance (RDS(on)):** 28mΩ (max) at VGS = -4.5V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Descriptions & Features:**  
- Designed for **high-efficiency power management** in applications such as load switching, DC-DC converters, and battery protection.  
- **Low on-resistance** for reduced conduction losses.  
- **Fast switching speed** for improved performance in high-frequency applications.  
- **AEC-Q101 qualified**, making it suitable for automotive applications.  
- **Lead (Pb)-free and RoHS compliant**.  
- **PowerPAK® SO-8 package** offers enhanced thermal performance and space savings.  

This MOSFET is commonly used in **automotive, industrial, and consumer electronics** for power switching and control.  

Would you like additional details on any specific parameter?

Application Scenarios & Design Considerations

Dual N-Channel 2.5-V G-S MOSFET

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