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SI6433BDQ-T1-GE3 from VISHAY

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SI6433BDQ-T1-GE3

Manufacturer: VISHAY, VIS

P-Channel 2.5-V (G-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI6433BDQ-T1-GE3,SI6433BDQT1GE3 VISHAY, VIS 12605 In Stock

Description and Introduction

P-Channel 2.5-V (G-S) MOSFET The SI6433BDQ-T1-GE3 is a P-Channel MOSFET manufactured by Vishay. Below are its specifications, descriptions, and features:

### **Specifications:**
- **Manufacturer:** Vishay
- **Type:** P-Channel MOSFET
- **Drain-Source Voltage (VDSS):** -30V
- **Continuous Drain Current (ID):** -5.7A
- **RDS(ON) (Max) @ VGS:**  
  - 45mΩ @ -10V  
  - 60mΩ @ -4.5V
- **Gate-Source Voltage (VGS):** ±20V
- **Power Dissipation (PD):** 2.5W
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** PowerPAK® SO-8

### **Descriptions:**
- The SI6433BDQ-T1-GE3 is designed for high-efficiency power management applications.
- It is suitable for load switching, DC-DC conversion, and battery management systems.
- The MOSFET features low on-resistance and high current handling capability.

### **Features:**
- **Low On-Resistance (RDS(ON)):** Enhances efficiency in power applications.
- **Fast Switching Speed:** Improves performance in high-frequency circuits.
- **PowerPAK® SO-8 Package:** Offers compact size and improved thermal performance.
- **AEC-Q101 Qualified:** Suitable for automotive applications.
- **Lead (Pb)-Free & RoHS Compliant:** Meets environmental standards.

This information is sourced from Vishay's official documentation.

Application Scenarios & Design Considerations

P-Channel 2.5-V (G-S) MOSFET

Alternative Part Number

  • NTMS4404NR2G --: P-channel MOSFET in SO-8 with comparable voltage and current ratings, widely available and pin-compatible for most switching applications.
  • DMP3035LPS-13 --: P-channel MOSFET in PowerDI5060/SO-8 class package with similar RDS(on) and voltage rating, suitable drop-in replacement for load switching.
  • IRF7416TRPBF --: Well-established P-channel MOSFET in SO-8 with similar -30V rating and current capability, commonly used as an alternative in low-voltage switching designs.

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