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SI6433BDQ-T1-GE3 from VISHAY

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SI6433BDQ-T1-GE3

Manufacturer: VISHAY

P-Channel 2.5-V (G-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI6433BDQ-T1-GE3,SI6433BDQT1GE3 VISHAY 9000 In Stock

Description and Introduction

P-Channel 2.5-V (G-S) MOSFET The SI6433BDQ-T1-GE3 is a P-Channel MOSFET manufactured by Vishay. Below are its specifications, descriptions, and features:

### **Specifications:**
- **Manufacturer:** Vishay
- **Type:** P-Channel MOSFET
- **Drain-Source Voltage (VDSS):** -30V
- **Continuous Drain Current (ID):** -5.7A
- **RDS(ON) (Max) @ VGS:**  
  - 45mΩ @ -10V  
  - 60mΩ @ -4.5V
- **Gate-Source Voltage (VGS):** ±20V
- **Power Dissipation (PD):** 2.5W
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** PowerPAK® SO-8

### **Descriptions:**
- The SI6433BDQ-T1-GE3 is designed for high-efficiency power management applications.
- It is suitable for load switching, DC-DC conversion, and battery management systems.
- The MOSFET features low on-resistance and high current handling capability.

### **Features:**
- **Low On-Resistance (RDS(ON)):** Enhances efficiency in power applications.
- **Fast Switching Speed:** Improves performance in high-frequency circuits.
- **PowerPAK® SO-8 Package:** Offers compact size and improved thermal performance.
- **AEC-Q101 Qualified:** Suitable for automotive applications.
- **Lead (Pb)-Free & RoHS Compliant:** Meets environmental standards.

This information is sourced from Vishay's official documentation.

Application Scenarios & Design Considerations

P-Channel 2.5-V (G-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI6433BDQ-T1-GE3,SI6433BDQT1GE3 VIS 3605 In Stock

Description and Introduction

P-Channel 2.5-V (G-S) MOSFET The SI6433BDQ-T1-GE3 is a P-Channel MOSFET manufactured by Vishay Siliconix (VIS). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Vishay Siliconix (VIS)  

### **Part Number:**  
SI6433BDQ-T1-GE3  

### **Description:**  
P-Channel 30 V (D-S) MOSFET in a PowerPAK® SO-8 package.  

### **Key Features:**  
- **Drain-Source Voltage (VDSS):** 30 V  
- **Continuous Drain Current (ID):** -8.3 A  
- **RDS(on) (Max) @ VGS = -10 V:** 28 mΩ  
- **RDS(on) (Max) @ VGS = -4.5 V:** 40 mΩ  
- **Gate-Source Voltage (VGS):** ±20 V  
- **Power Dissipation (PD):** 2.5 W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Applications:**  
- Power management in portable devices  
- Load switching  
- Battery protection circuits  

This information is based on the manufacturer's datasheet. For detailed electrical characteristics and performance curves, refer to the official Vishay Siliconix documentation.

Application Scenarios & Design Considerations

P-Channel 2.5-V (G-S) MOSFET

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