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SI5856DC-T1 from VISHAY

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SI5856DC-T1

Manufacturer: VISHAY

N-Channel 1.8-V (G-S) MOSFET With Schottky Diode
Partnumber Manufacturer Quantity Availability
SI5856DC-T1,SI5856DCT1 VISHAY 10541 In Stock

Description and Introduction

N-Channel 1.8-V (G-S) MOSFET With Schottky Diode **Manufacturer:** VISHAY  

**Part Number:** SI5856DC-T1  

**Specifications:**  
- **Type:** N-Channel MOSFET  
- **Voltage - Drain to Source (Vdss):** 30V  
- **Current - Continuous Drain (Id) @ 25°C:** 5.7A  
- **Rds On (Max) @ Id, Vgs:** 50mΩ @ 5.7A, 10V  
- **Vgs(th) (Max) @ Id:** 2.5V @ 250µA  
- **Gate Charge (Qg) @ Vgs:** 8.5nC @ 10V  
- **Input Capacitance (Ciss):** 430pF @ 15V  
- **Power Dissipation (Max):** 2.5W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package / Case:** PowerPAK® SC-70-6  

**Descriptions and Features:**  
- **Technology:** TrenchFET® Gen III  
- **Low On-Resistance:** Optimized for high efficiency in power management applications.  
- **Fast Switching:** Suitable for high-frequency switching circuits.  
- **Small Footprint:** PowerPAK® SC-70-6 package saves board space.  
- **Applications:** Power management, load switching, DC-DC converters, and battery protection.  

(Source: VISHAY datasheet for SI5856DC-T1)

Application Scenarios & Design Considerations

N-Channel 1.8-V (G-S) MOSFET With Schottky Diode

Alternative Part Number

  • FDC6330L --: P-channel MOSFET in SOT-23 package with comparable voltage and current ratings, widely available and pin-compatible for many load-switch applications.
  • DMP2035U --: P-channel MOSFET offering similar RDS(on) and voltage rating in a small surface-mount package, suitable as a functional replacement.
  • PMV65XP --: P-channel MOSFET with comparable specifications and SOT-23 footprint, providing a cost-effective alternative with good availability.

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