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SI5855DC-T1-E3 from VISHAY

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SI5855DC-T1-E3

Manufacturer: VISHAY

P-Channel 1.8 V (G-S) MOSFET with Schottky Diode
Partnumber Manufacturer Quantity Availability
SI5855DC-T1-E3,SI5855DCT1E3 VISHAY 950 In Stock

Description and Introduction

P-Channel 1.8 V (G-S) MOSFET with Schottky Diode **Manufacturer:** VISHAY  
**Part Number:** SI5855DC-T1-E3  

**Specifications:**  
- **Type:** N-Channel MOSFET  
- **Voltage - Drain-Source Breakdown (Vdss):** 30V  
- **Current - Continuous Drain (Id) @ 25°C:** 5.8A  
- **Rds On (Max) @ Id, Vgs:** 50mΩ @ 5.8A, 10V  
- **Gate-Source Voltage (Vgs) Max:** ±20V  
- **Power Dissipation (Pd):** 2.5W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package / Case:** PowerPAK® SC-70-6  

**Descriptions:**  
The SI5855DC-T1-E3 is a small-signal N-Channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance.  

**Features:**  
- Low threshold voltage  
- High current handling capability  
- Compact PowerPAK® SC-70-6 package  
- RoHS compliant  
- Lead-free and halogen-free  

(Source: VISHAY datasheet)

Application Scenarios & Design Considerations

P-Channel 1.8 V (G-S) MOSFET with Schottky Diode

Alternative Part Number

  • DMP2035U-7 --: P-channel MOSFET in a similar small SOT-23 package with comparable voltage and current ratings, suitable as a drop-in functional replacement.
  • PMV65XP,215 --: P-channel MOSFET with similar RDS(on) and voltage rating in a compact SOT-23 package, offering comparable switching performance.
  • FDC6333C --: P-channel MOSFET with matching voltage class and low on-resistance in a small surface-mount package, usable as an alternative with layout verification.

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