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SI5513DC from SI

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SI5513DC

Manufacturer: SI, VISHAY

Complementary 20-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI5513DC SI, VISHAY 6239 In Stock

Description and Introduction

Complementary 20-V (D-S) MOSFET The SI5513DC is a power MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** Vishay  
- **Part Number:** SI5513DC  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.0085Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1V to 2V  
- **Input Capacitance (Ciss):** 1800pF  
- **Output Capacitance (Coss):** 600pF  
- **Reverse Transfer Capacitance (Crss):** 150pF  
- **Package:** TO-263 (D2PAK)  

### **Descriptions:**
- The SI5513DC is a high-performance N-Channel MOSFET designed for power management applications.  
- It is optimized for low on-resistance and high current handling, making it suitable for switching and amplification in power circuits.  
- The TO-263 package provides efficient thermal dissipation.  

### **Features:**
- Low RDS(on) for reduced conduction losses.  
- High current capability for power applications.  
- Fast switching performance.  
- Robust and reliable for industrial and automotive applications.  
- Lead (Pb)-free and RoHS compliant.  

This information is based on Vishay's datasheet for the SI5513DC.

Application Scenarios & Design Considerations

Complementary 20-V (D-S) MOSFET

Alternative Part Number

  • FDC6420C --: Dual N/P-channel MOSFET in a small package with comparable voltage and current ratings, suitable for load-switch and level-shift applications.
  • NTMD6N02R2 --: Dual N-channel MOSFET with similar RDS(on) and current capability, usable as a functional substitute in switching circuits.
  • IRF7309 --: Dual N/P-channel MOSFET with comparable voltage rating and low on-resistance, a common alternative for complementary MOSFET pairs.
  • NTZD3154NT1G --: Complementary dual MOSFET in SOT-563 offering similar RDS(on) and voltage ratings, usable as a functional substitute in compact designs.
  • PMGD280UN,115 --: Small-signal dual MOSFET in a tiny package with comparable switching characteristics, providing an alternative source for space-constrained circuits.

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