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SI5406DC-T1 from VISHAY

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SI5406DC-T1

Manufacturer: VISHAY

N-Channel 2.5-V (G-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI5406DC-T1,SI5406DCT1 VISHAY 21000 In Stock

Description and Introduction

N-Channel 2.5-V (G-S) MOSFET The SI5406DC-T1 is a MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** Vishay  
### **Part Number:** SI5406DC-T1  

#### **Specifications:**  
- **Transistor Type:** N-Channel  
- **Technology:** MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 5.5A  
- **RDS(ON) (Max) @ VGS = 10V:** 0.042Ω  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Junction Temperature Range:** -55°C to +150°C  

#### **Package:**  
- **Package Type:** PowerPAK® SO-8  
- **Mounting Type:** Surface Mount  

#### **Features:**  
- Low on-resistance (RDS(ON))  
- Fast switching performance  
- High power efficiency  
- Designed for power management applications  

This information is based solely on the provided knowledge base. No additional guidance or suggestions are included.

Application Scenarios & Design Considerations

N-Channel 2.5-V (G-S) MOSFET

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