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SI4948BEY-T1-E3 from VISHAY

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SI4948BEY-T1-E3

Manufacturer: VISHAY

Dual P-Channel 60-V (D-S) 175 MOSFET

Partnumber Manufacturer Quantity Availability
SI4948BEY-T1-E3,SI4948BEYT1E3 VISHAY 10738 In Stock

Description and Introduction

Dual P-Channel 60-V (D-S) 175 MOSFET The SI4948BEY-T1-E3 is a dual N-channel MOSFET manufactured by Vishay. Below are its specifications, descriptions, and features:

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Type:** Dual N-Channel MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Drain-Source Voltage (VDSS):** 30 V  
- **Gate-Source Voltage (VGS):** ±20 V  
- **Drain Current (ID):** 6.3 A (per MOSFET)  
- **RDS(on) (Max):**  
  - 12 mΩ at VGS = 10 V  
  - 15 mΩ at VGS = 4.5 V  
- **Power Dissipation (PD):** 2.5 W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Descriptions:**  
- The SI4948BEY-T1-E3 is a high-performance dual N-channel MOSFET designed for power management applications.  
- It features low on-resistance (RDS(on)) and high current handling capability.  
- Suitable for synchronous buck converters, DC-DC converters, and load switching applications.  

### **Features:**  
- **Low RDS(on):** Enhances efficiency in power conversion.  
- **TrenchFET® Gen III Technology:** Provides superior switching performance.  
- **Dual N-Channel Configuration:** Space-saving solution for compact designs.  
- **PowerPAK® SO-8 Package:** Optimized for thermal and electrical performance.  
- **Pb-Free and RoHS Compliant:** Environmentally friendly.  

For detailed datasheets, refer to Vishay’s official documentation.

Application Scenarios & Design Considerations

Dual P-Channel 60-V (D-S) 175 MOSFET

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