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SI4943BDY-T1-E3 from VISHAY

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SI4943BDY-T1-E3

Manufacturer: VISHAY

Dual P-Channel 20-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI4943BDY-T1-E3,SI4943BDYT1E3 VISHAY 2650 In Stock

Description and Introduction

Dual P-Channel 20-V (D-S) MOSFET The SI4943BDY-T1-E3 is a dual N-channel and P-channel MOSFET manufactured by Vishay. Below are its specifications, descriptions, and features based on factual information:

### **Specifications:**
- **Manufacturer:** Vishay  
- **Configuration:** Dual N-Channel and P-Channel  
- **Technology:** TrenchFET® Gen III  
- **Drain-Source Voltage (VDS):**  
  - N-Channel: 30V  
  - P-Channel: -30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):**  
  - N-Channel: 5.3A  
  - P-Channel: -4.3A  
- **On-Resistance (RDS(on)):**  
  - N-Channel: 28mΩ (at VGS = 10V)  
  - P-Channel: 45mΩ (at VGS = -10V)  
- **Power Dissipation (PD):** 2.5W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Descriptions:**
- The SI4943BDY-T1-E3 is a dual MOSFET combining an N-channel and P-channel in a single PowerPAK® SO-8 package.  
- It is designed for high-efficiency power management applications, including DC-DC converters and load switching.  
- Utilizes Vishay's TrenchFET® Gen III technology for low on-resistance and high switching performance.  

### **Features:**
- Low on-resistance for reduced conduction losses.  
- Optimized for synchronous buck converters.  
- High power density in a compact SO-8 package.  
- Lead (Pb)-free and RoHS compliant.  
- Halogen-free according to IEC 61249-2-21.  

This information is strictly based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

Dual P-Channel 20-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI4943BDY-T1-E3,SI4943BDYT1E3 VISHAYNON-FR 5789 In Stock

Description and Introduction

Dual P-Channel 20-V (D-S) MOSFET The SI4943BDY-T1-E3 is a dual N-channel MOSFET manufactured by Vishay.  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Configuration:** Dual N-Channel  
- **Drain-Source Voltage (VDSS):** 30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** 5.3A per channel  
- **Pulsed Drain Current (IDM):** 20A per channel  
- **On-Resistance (RDS(on)):** 28mΩ (max) at VGS = 10V  
- **Power Dissipation (PD):** 2.5W  
- **Package:** PowerPAK® SO-8  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions & Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance for reduced conduction losses.  
- Optimized for synchronous buck converters and power switching.  
- Lead (Pb)-free and RoHS compliant.  
- Halogen-free according to IEC 61249-2-21.  

This MOSFET is commonly used in DC-DC converters, motor control, and load switching applications.

Application Scenarios & Design Considerations

Dual P-Channel 20-V (D-S) MOSFET

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