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SI4925BDY-T1 from SILICON

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SI4925BDY-T1

Manufacturer: SILICON

Dual P-Channel 30-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI4925BDY-T1,SI4925BDYT1 SILICON 160 In Stock

Description and Introduction

Dual P-Channel 30-V (D-S) MOSFET The SI4925BDY-T1 is a P-channel MOSFET manufactured by SILICON. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** SILICON  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -5.8A  
- **Pulsed Drain Current (IDM):** -20A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 50mΩ (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Package:** SOP-8  

### **Descriptions and Features:**
- **Low On-Resistance:** Optimized for power efficiency.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Avalanche Energy Rated:** Enhances reliability in rugged conditions.  
- **Logic-Level Gate Drive:** Compatible with low-voltage control circuits.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is strictly based on the manufacturer's datasheet.

Application Scenarios & Design Considerations

Dual P-Channel 30-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI4925BDY-T1,SI4925BDYT1 Vishay 20000 In Stock

Description and Introduction

Dual P-Channel 30-V (D-S) MOSFET The SI4925BDY-T1 is a P-channel MOSFET manufactured by Vishay. Here are its key specifications, descriptions, and features:

### **Specifications:**
- **Drain-Source Voltage (VDSS):** -30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -5.7A  
- **Pulsed Drain Current (IDM):** -20A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 50mΩ at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**
The SI4925BDY-T1 is a P-channel MOSFET designed for power management applications, offering low on-resistance and high efficiency. It is housed in a PowerPAK® SO-8 package, which enhances thermal performance.

### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.  
- **High Current Handling:** Supports up to -5.7A continuous drain current.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **PowerPAK® SO-8 Package:** Improves thermal dissipation.  
- **AEC-Q101 Qualified:** Suitable for automotive applications.  

This MOSFET is commonly used in DC-DC converters, load switches, and battery management systems.

Application Scenarios & Design Considerations

Dual P-Channel 30-V (D-S) MOSFET

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