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SI4922BDY-T1-E3 from VISHAY

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SI4922BDY-T1-E3

Manufacturer: VISHAY

Dual N-Channel 30-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI4922BDY-T1-E3,SI4922BDYT1E3 VISHAY 37500 In Stock

Description and Introduction

Dual N-Channel 30-V (D-S) MOSFET The SI4922BDY-T1-E3 is a dual P-channel MOSFET manufactured by Vishay.  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Type:** Dual P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -4.5A per channel  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 50mΩ (max) at VGS = -4.5V  
- **Package:** PowerPAK® SO-8  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions & Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance for reduced conduction losses.  
- Optimized for load switching and battery protection circuits.  
- RoHS compliant and halogen-free.  
- Suitable for portable electronics, power supplies, and DC-DC converters.  

This information is based on Vishay's official datasheet for the SI4922BDY-T1-E3.

Application Scenarios & Design Considerations

Dual N-Channel 30-V (D-S) MOSFET

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