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SI4913DY from VISHAY

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SI4913DY

Manufacturer: VISHAY

Dual P-Channel 20-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI4913DY VISHAY 98 In Stock

Description and Introduction

Dual P-Channel 20-V (D-S) MOSFET The SI4913DY is a dual N-channel MOSFET manufactured by Vishay. Here are the specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Type:** Dual N-Channel MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 5.3A per channel  
- **RDS(on) (Max):** 28mΩ at VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SO-8  

### **Descriptions:**  
- The SI4913DY is a high-performance dual N-channel MOSFET designed for power management applications.  
- It features low on-resistance and fast switching characteristics, making it suitable for DC-DC converters, load switching, and motor control.  

### **Features:**  
- **Low RDS(on):** Enhances efficiency in power applications.  
- **TrenchFET® Gen III Technology:** Provides improved performance in a compact package.  
- **Dual N-Channel Configuration:** Allows for space-saving designs.  
- **Logic-Level Gate Drive:** Compatible with 5V drive signals.  
- **Fast Switching Speed:** Reduces switching losses.  
- **ESD Protection:** Improves reliability in harsh environments.  

This information is based solely on the provided knowledge base. Let me know if you need further details.

Application Scenarios & Design Considerations

Dual P-Channel 20-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI4913DY SILICONI 150 In Stock

Description and Introduction

Dual P-Channel 20-V (D-S) MOSFET The part **SI4913DY** is manufactured by **SILICONIX (now part of Vishay)**.  

### **Specifications:**  
- **Type:** Dual N-Channel MOSFET  
- **Voltage Rating (VDS):** 30V  
- **Current Rating (ID):** 5.5A per channel  
- **RDS(ON) (Max):** 0.045Ω (at VGS = 10V)  
- **Gate Threshold Voltage (VGS(th)):** 1V to 2.5V  
- **Power Dissipation (PD):** 2W (per MOSFET)  
- **Package:** SOIC-8  

### **Descriptions and Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance (RDS(ON)) for reduced conduction losses.  
- Suitable for load switching, DC-DC converters, and motor control.  
- Fast switching performance.  
- Logic-level gate drive compatibility.  
- Lead-free and RoHS compliant.  

Let me know if you need further details.

Application Scenarios & Design Considerations

Dual P-Channel 20-V (D-S) MOSFET

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