IC Phoenix logo

Home ›  S  › S25 > SI4618DY

SI4618DY from N/A

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

0.000ms

SI4618DY

Manufacturer: N/A

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Partnumber Manufacturer Quantity Availability
SI4618DY N/A 720 In Stock

Description and Introduction

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode The SI4618DY is a dual N-channel MOSFET manufactured by Vishay Siliconix.  

**Specifications:**  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 6.3A per channel  
- **RDS(ON) (Max):** 0.035Ω at VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W (per MOSFET)  
- **Package:** SO-8  

**Descriptions and Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance for reduced conduction losses.  
- Fast switching performance.  
- Suitable for synchronous rectification in DC-DC converters.  
- Lead-free and RoHS compliant.  

(Note: Manufacturer is Vishay Siliconix, not "N/A.")

Partnumber Manufacturer Quantity Availability
SI4618DY VISHAY 10000 In Stock

Description and Introduction

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode The SI4618DY is a dual N-channel MOSFET manufactured by Vishay. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** Vishay  
- **Part Number:** SI4618DY  
- **Type:** Dual N-Channel MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Drain-Source Voltage (VDSS):** 30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** 6.3A per channel  
- **Pulsed Drain Current (IDM):** 25A per channel  
- **On-Resistance (RDS(on)):** 28mΩ (max) at VGS = 10V  
- **Power Dissipation (PD):** 2.5W (per channel)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SO-8  

### **Descriptions:**
- The SI4618DY is a high-performance dual N-channel MOSFET designed for power management applications.  
- It utilizes Vishay’s TrenchFET® Gen III technology, offering low on-resistance and high efficiency.  
- Suitable for synchronous buck converters, motor control, and load switching.  

### **Features:**
- **Low RDS(on)** for reduced conduction losses.  
- **High current handling** capability in a compact SO-8 package.  
- **Fast switching performance** for improved efficiency.  
- **AEC-Q101 qualified** for automotive applications.  
- **Lead (Pb)-free and RoHS compliant.**  

This information is based solely on the manufacturer's datasheet and technical documentation.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips