Dual N & P-Channel Enhancement Mode Field Effect Transistor **Manufacturer:** VISHAY
**Part Number:** SI4539DY
### **Specifications:**
- **Type:** Dual N-Channel and P-Channel MOSFET
- **Technology:** TrenchFET® Gen III
- **Voltage Ratings:**
- **Drain-Source Voltage (VDSS):**
- N-Channel: 30V
- P-Channel: -30V
- **Current Ratings:**
- **Continuous Drain Current (ID):**
- N-Channel: 7.5A
- P-Channel: -5.5A
- **On-Resistance (RDS(on)):**
- N-Channel: 28mΩ (at VGS = 10V)
- P-Channel: 55mΩ (at VGS = -10V)
- **Gate-Source Voltage (VGS):** ±20V
- **Power Dissipation (PD):** 2.5W
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** SO-8
### **Descriptions and Features:**
- **Dual MOSFET:** Combines one N-Channel and one P-Channel MOSFET in a single package.
- **Low On-Resistance:** Enhances efficiency in power applications.
- **TrenchFET® Gen III Technology:** Provides high performance with reduced conduction losses.
- **Logic-Level Gate Drive:** Compatible with low-voltage control signals.
- **Fast Switching Speed:** Suitable for high-frequency applications.
- **Applications:** Power management, DC-DC converters, motor control, and load switching.
This information is based on VISHAY's datasheet for the SI4539DY.
