IC Phoenix logo

Home ›  S  › S25 > SI4378DY-T1-E3

SI4378DY-T1-E3 from SI

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

15.625ms

SI4378DY-T1-E3

Manufacturer: SI

N-Channel 20-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI4378DY-T1-E3,SI4378DYT1E3 SI 4457 In Stock

Description and Introduction

N-Channel 20-V (D-S) MOSFET The SI4378DY-T1-E3 is a P-Channel MOSFET manufactured by Vishay Siliconix. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
Vishay Siliconix  

### **Specifications:**  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -30V  
- **Continuous Drain Current (ID):** -5.5A  
- **RDS(ON) (Max):** 0.055Ω @ VGS = -10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SO-8  

### **Descriptions and Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance for reduced conduction losses.  
- Fast switching performance.  
- Suitable for load switching, power management, and DC-DC conversion.  
- Lead (Pb)-free and RoHS compliant.  

This information is based solely on the provided knowledge base. For further details, refer to the official datasheet from Vishay Siliconix.

Partnumber Manufacturer Quantity Availability
SI4378DY-T1-E3,SI4378DYT1E3 VISHAY 1588 In Stock

Description and Introduction

N-Channel 20-V (D-S) MOSFET The SI4378DY-T1-E3 is a P-Channel MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI4378DY-T1-E3  
- **Type:** P-Channel MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Drain-Source Voltage (VDSS):** -30V  
- **Continuous Drain Current (ID):** -8.5A  
- **Pulsed Drain Current (IDM):** -34A  
- **RDS(ON) (Max) @ VGS = -10V:** 30mΩ  
- **RDS(ON) (Max) @ VGS = -4.5V:** 45mΩ  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Descriptions & Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power management.  
- **TrenchFET® Gen III Technology:** Provides improved switching performance and reduced conduction losses.  
- **PowerPAK® SO-8 Package:** Enhances thermal performance and power handling.  
- **AEC-Q101 Qualified:** Suitable for automotive applications.  
- **RoHS Compliant:** Meets environmental standards.  
- **Applications:** Used in power management, DC-DC converters, load switching, and battery protection circuits.  

This information is based solely on the manufacturer's datasheet and technical documentation.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips