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SI4340DY-T1 from VISHAY

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SI4340DY-T1

Manufacturer: VISHAY

Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
Partnumber Manufacturer Quantity Availability
SI4340DY-T1,SI4340DYT1 VISHAY 422 In Stock

Description and Introduction

Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode **Manufacturer:** VISHAY  

**Part Number:** SI4340DY-T1  

**Specifications:**  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 11A  
- **RDS(ON) (Max):** 0.027Ω @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SO-8  

**Descriptions:**  
The SI4340DY-T1 is an N-Channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance.  

**Features:**  
- Low RDS(ON) for reduced conduction losses  
- High current handling capability  
- Fast switching speed  
- Enhanced thermal performance  
- RoHS compliant  

This information is based on the manufacturer's datasheet. For detailed technical data, refer to the official documentation from VISHAY.

Application Scenarios & Design Considerations

Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

Alternative Part Number

  • FDS6680A --: N-channel MOSFET in SO-8 with comparable 30V rating and low RDS(on), widely available and pin-compatible with the SI4340DY footprint.
  • IRF7413ZPBF --: 30V N-channel MOSFET in SO-8 package offering similar current handling and on-resistance, suitable drop-in replacement for switching applications.
  • AO4406A --: 30V N-channel MOSFET in SO-8 with low gate charge and comparable RDS(on), a cost-effective alternative for the same circuit role.

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