Dual N-Channel 40 V (D-S) MOSFET **Manufacturer:** VISHAY
**Part Number:** SI4286DY
### **Specifications:**
- **Type:** N-Channel MOSFET
- **Drain-Source Voltage (VDSS):** 30V
- **Continuous Drain Current (ID):** 30A
- **Pulsed Drain Current (IDM):** 120A
- **Power Dissipation (PD):** 45W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 6.5mΩ (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 1V to 2.5V
- **Total Gate Charge (Qg):** 30nC (typ)
- **Input Capacitance (Ciss):** 1400pF (typ)
- **Output Capacitance (Coss):** 500pF (typ)
- **Reverse Transfer Capacitance (Crss):** 100pF (typ)
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** SO-8 (D²PAK)
### **Descriptions and Features:**
- High-performance N-Channel MOSFET designed for power management applications.
- Low on-resistance for reduced conduction losses.
- Fast switching performance for efficient power conversion.
- Suitable for DC-DC converters, motor control, and load switching.
- Robust thermal performance due to the D²PAK package.
- Lead-free and RoHS compliant.
(Note: Verify datasheet for latest specifications.)
