N-Channel 100 V (D-S) MOSFET **Manufacturer:** VISHAY
**Part Number:** SI4190ADY
### **Specifications:**
- **Type:** Dual N-Channel MOSFET
- **Technology:** TrenchFET® Gen III
- **Drain-Source Voltage (VDSS):** 30V
- **Continuous Drain Current (ID):** 10A per MOSFET (at TC = 25°C)
- **Pulsed Drain Current (IDM):** 40A
- **On-Resistance (RDS(on)):**
- 9.5mΩ (max) at VGS = 10V
- 12mΩ (max) at VGS = 4.5V
- **Gate-Source Voltage (VGS):** ±20V
- **Power Dissipation (PD):** 2.5W (per MOSFET)
- **Operating Temperature Range:** -55°C to +150°C
### **Descriptions:**
- Designed for high-efficiency power management applications.
- Low gate charge and low on-resistance for improved switching performance.
- Suitable for synchronous buck converters, DC-DC converters, and motor control.
### **Features:**
- **Dual N-Channel Configuration:** Two MOSFETs in a single package.
- **Low RDS(on):** Enhances efficiency in power conversion.
- **Fast Switching:** Optimized for high-frequency applications.
- **Lead-Free & RoHS Compliant:** Environmentally friendly.
- **Package:** SO-8 (PowerPAK®) for compact PCB designs.
(Data sourced from VISHAY's official documentation.)
