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SI3861BDV from VISHAY

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SI3861BDV

Manufacturer: VISHAY

Load Switch with Level-Shift
Partnumber Manufacturer Quantity Availability
SI3861BDV VISHAY 10000 In Stock

Description and Introduction

Load Switch with Level-Shift **Manufacturer:** VISHAY  

**Part Number:** SI3861BDV  

**Specifications:**  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDS):** 20V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Continuous Drain Current (ID):** 6.3A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 28mΩ (max) at VGS = 4.5V  
- **Threshold Voltage (VGS(th)):** 0.6V (min) - 1.2V (max)  
- **Package:** PowerPAK® SO-8  

**Descriptions:**  
The SI3861BDV is a N-Channel MOSFET designed for high-efficiency power management applications. It offers low on-resistance and fast switching performance.  

**Features:**  
- Low on-resistance (RDS(on))  
- High current handling capability  
- Optimized for power management in portable devices  
- PowerPAK® SO-8 package for improved thermal performance  
- RoHS compliant  

(Source: Vishay datasheet)

Application Scenarios & Design Considerations

Load Switch with Level-Shift

Alternative Part Number

  • FDC6420C --: Dual N/P-channel MOSFET in a small SuperSOT-6 package with comparable voltage and current ratings, suitable for load-switch and level-shift applications.
  • NTZD3154NT1G --: Complementary dual MOSFET in a compact SOT-563 package offering similar RDS(on) and voltage ratings for space-constrained designs.
  • DMG6602SVT --: Dual N/P-channel MOSFET in TSOT-26 with low on-resistance and logic-level gate drive, a practical drop-in style alternative for switching circuits.

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