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SI3586DV from VIS

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SI3586DV

Manufacturer: VIS

N- and P-Channel 20-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI3586DV VIS 5000 In Stock

Description and Introduction

N- and P-Channel 20-V (D-S) MOSFET The part **SI3586DV** is manufactured by **VIS (Vishay Intertechnology, Inc.)**.  

### **Specifications:**  
- **Manufacturer:** VIS (Vishay Intertechnology, Inc.)  
- **Part Number:** SI3586DV  
- **Type:** Dual N-Channel MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Voltage Rating (VDS):** 30V  
- **Current Rating (ID):** 7.5A (per channel)  
- **On-Resistance (RDS(on)):** 20mΩ (max) at VGS = 10V  
- **Gate Charge (Qg):** 12nC (typical)  
- **Power Dissipation (PD):** 2.5W (per channel)  
- **Package:** PowerPAK® SO-8  

### **Descriptions:**  
The SI3586DV is a dual N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance, making it suitable for DC-DC converters, load switches, and motor control.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- High current handling capability  
- Optimized for high-frequency switching  
- TrenchFET® Gen III technology for improved efficiency  
- PowerPAK® SO-8 package for space-saving designs  
- RoHS compliant  

This information is based on the manufacturer's datasheet. For detailed electrical characteristics, refer to Vishay's official documentation.

Partnumber Manufacturer Quantity Availability
SI3586DV VISHAY 10000 In Stock

Description and Introduction

N- and P-Channel 20-V (D-S) MOSFET **Manufacturer:** VISHAY  

**Part Number:** SI3586DV  

### **Specifications:**  
- **Type:** Dual N-Channel MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 6.3A (per MOSFET)  
- **RDS(on) (Max):** 28mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W (per MOSFET)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Descriptions:**  
The SI3586DV is a dual N-channel MOSFET from Vishay’s TrenchFET® Gen III series, designed for high-efficiency power management applications. It features low on-resistance and fast switching performance.  

### **Features:**  
- Low gate charge for improved switching efficiency  
- Optimized for synchronous buck converters  
- Lead (Pb)-free and RoHS compliant  
- Halogen-free according to IEC 61249-2-21  
- AEC-Q101 qualified (for automotive applications)  

(Note: Always verify datasheet details for precise application requirements.)

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