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SI3586DV from VIS

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SI3586DV

Manufacturer: VIS

N- and P-Channel 20-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI3586DV VIS 5000 In Stock

Description and Introduction

N- and P-Channel 20-V (D-S) MOSFET The part **SI3586DV** is manufactured by **VIS (Vishay Intertechnology, Inc.)**.  

### **Specifications:**  
- **Manufacturer:** VIS (Vishay Intertechnology, Inc.)  
- **Part Number:** SI3586DV  
- **Type:** Dual N-Channel MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Voltage Rating (VDS):** 30V  
- **Current Rating (ID):** 7.5A (per channel)  
- **On-Resistance (RDS(on)):** 20mΩ (max) at VGS = 10V  
- **Gate Charge (Qg):** 12nC (typical)  
- **Power Dissipation (PD):** 2.5W (per channel)  
- **Package:** PowerPAK® SO-8  

### **Descriptions:**  
The SI3586DV is a dual N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance, making it suitable for DC-DC converters, load switches, and motor control.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- High current handling capability  
- Optimized for high-frequency switching  
- TrenchFET® Gen III technology for improved efficiency  
- PowerPAK® SO-8 package for space-saving designs  
- RoHS compliant  

This information is based on the manufacturer's datasheet. For detailed electrical characteristics, refer to Vishay's official documentation.

Application Scenarios & Design Considerations

N- and P-Channel 20-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI3586DV VISHAY 10000 In Stock

Description and Introduction

N- and P-Channel 20-V (D-S) MOSFET **Manufacturer:** VISHAY  

**Part Number:** SI3586DV  

### **Specifications:**  
- **Type:** Dual N-Channel MOSFET  
- **Technology:** TrenchFET® Gen III  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 6.3A (per MOSFET)  
- **RDS(on) (Max):** 28mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W (per MOSFET)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Descriptions:**  
The SI3586DV is a dual N-channel MOSFET from Vishay’s TrenchFET® Gen III series, designed for high-efficiency power management applications. It features low on-resistance and fast switching performance.  

### **Features:**  
- Low gate charge for improved switching efficiency  
- Optimized for synchronous buck converters  
- Lead (Pb)-free and RoHS compliant  
- Halogen-free according to IEC 61249-2-21  
- AEC-Q101 qualified (for automotive applications)  

(Note: Always verify datasheet details for precise application requirements.)

Application Scenarios & Design Considerations

N- and P-Channel 20-V (D-S) MOSFET

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