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SI3447 from AVISHAY

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SI3447

Manufacturer: AVISHAY

P-Channel 1.8V Specified PowerTrench MOSFET

Partnumber Manufacturer Quantity Availability
SI3447 AVISHAY 3000 In Stock

Description and Introduction

P-Channel 1.8V Specified PowerTrench MOSFET The part SI3447 is manufactured by AVISHAY. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** AVISHAY  
- **Part Number:** SI3447  
- **Type:** Power MOSFET  
- **Technology:** N-Channel Enhancement Mode  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 12A  
- **Power Dissipation (PD):** 40W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.025Ω (max)  
- **Package:** TO-220  

### **Descriptions & Features:**  
- Designed for high-efficiency power switching applications.  
- Low on-resistance for reduced conduction losses.  
- Fast switching speed for improved performance in DC-DC converters and motor control.  
- Avalanche energy rated for ruggedness in inductive load applications.  
- Lead-free and RoHS compliant.  

This information is based strictly on the available knowledge base. Let me know if you need further details.

Application Scenarios & Design Considerations

P-Channel 1.8V Specified PowerTrench MOSFET
Partnumber Manufacturer Quantity Availability
SI3447 VISHAY 520 In Stock

Description and Introduction

P-Channel 1.8V Specified PowerTrench MOSFET The part SI3447 is manufactured by **VISHAY**. Below are the specifications, descriptions, and features based on the available knowledge:  

### **Specifications:**  
- **Manufacturer:** VISHAY  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 5.7A  
- **RDS(ON) (Max) @ VGS = 10V:** 0.035Ω  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SO-8 (Surface Mount)  

### **Description:**  
The SI3447 is an **N-Channel MOSFET** designed for **low-voltage, high-efficiency switching applications**. It is commonly used in **power management, DC-DC converters, and load switching circuits** due to its low on-resistance and fast switching characteristics.  

### **Features:**  
- **Low On-Resistance (RDS(ON))** for reduced conduction losses  
- **Fast Switching Speed** for improved efficiency  
- **Avalanche Energy Rated** for reliability in rugged conditions  
- **Lead-Free & RoHS Compliant**  
- **Optimized for High-Performance Power Applications**  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

P-Channel 1.8V Specified PowerTrench MOSFET

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