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SI3441BDV-T1

P-Channel 2.5-V (G-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI3441BDV-T1,SI3441BDVT1 3000 In Stock

Description and Introduction

P-Channel 2.5-V (G-S) MOSFET The part **SI3441BDV-T1** is a **P-Channel MOSFET** manufactured by **Vishay Siliconix**.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** -20V  
- **Continuous Drain Current (ID):** -4.3A  
- **RDS(ON) (Max):** 0.052Ω @ VGS = -4.5V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Power Dissipation (PD):** 1.4W  
- **Package:** **TSOP-6**  

### **Features:**  
- **Low On-Resistance (RDS(ON))** for efficient power handling  
- **High-Speed Switching** performance  
- **Avalanche Energy Rated** for robustness  
- **Lead-Free & RoHS Compliant**  

### **Applications:**  
- Power management in portable electronics  
- DC-DC converters  
- Load switching  

This MOSFET is designed for **high-efficiency, low-voltage applications**.

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