N-Channel 100-V (D-S) MOSFET Here are the factual details about the **SI3430DV-T1** manufactured by **VISHAY**:
### **Specifications:**
- **Manufacturer:** Vishay Siliconix
- **Part Number:** SI3430DV-T1
- **Type:** P-Channel MOSFET
- **Technology:** Power MOSFET
- **Package:** TSOP-6
- **Drain-Source Voltage (VDSS):** -20V
- **Gate-Source Voltage (VGS):** ±12V
- **Continuous Drain Current (ID):** -5.3A (at TC = 25°C)
- **Pulsed Drain Current (IDM):** -20A
- **Power Dissipation (PD):** 2.5W (at TA = 25°C)
- **On-Resistance (RDS(on)):** 50mΩ (max) at VGS = -4.5V
- **Threshold Voltage (VGS(th)):** -1V (max)
- **Operating Temperature Range:** -55°C to +150°C
### **Descriptions:**
- The **SI3430DV-T1** is a **P-Channel MOSFET** designed for **power management** applications.
- It is optimized for **low-voltage, high-efficiency switching** in portable electronics, battery protection, and load switching.
- The **TSOP-6 package** offers a compact footprint, making it suitable for space-constrained designs.
### **Features:**
- **Low On-Resistance (RDS(on))** for reduced conduction losses.
- **Fast Switching Speed** for efficient power conversion.
- **Low Gate Charge (QG)** for improved switching performance.
- **Avalanche Energy Rated** for robustness in transient conditions.
- **Lead (Pb)-Free & RoHS Compliant** for environmental compliance.
This information is sourced from Vishay's official documentation. For detailed application notes or reliability data, refer to the manufacturer's datasheet.
