IC Phoenix logo

Home ›  S  › S24 > SI3050

SI3050 from SANKEN

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

0.000ms

SI3050

Manufacturer: SANKEN

PCM highway data interface law A-law companding SPI control interface GCl interface

Partnumber Manufacturer Quantity Availability
SI3050 SANKEN 5000 In Stock

Description and Introduction

PCM highway data interface law A-law companding SPI control interface GCl interface The SI3050 is a power MOSFET manufactured by SANKEN. Below are the specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **Power Dissipation (PD):** 100W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(ON)):** 0.035Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 1800pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Description:**  
The SI3050 is a high-performance N-Channel MOSFET designed for power switching applications. It offers low on-resistance and high-speed switching capabilities, making it suitable for power supplies, motor control, and DC-DC converters.  

### **Features:**  
- Low on-resistance (RDS(ON)) for reduced conduction losses  
- High current handling capability  
- Fast switching performance  
- Robust thermal characteristics  
- Suitable for high-efficiency power applications  

For detailed datasheet information, refer to SANKEN's official documentation.

Partnumber Manufacturer Quantity Availability
SI3050 SK 1000 In Stock

Description and Introduction

PCM highway data interface law A-law companding SPI control interface GCl interface The part **SI3050** is manufactured by **SK**. Below are the specifications, descriptions, and features based on the available knowledge:  

### **Specifications:**  
- **Manufacturer:** SK  
- **Part Number:** SI3050  
- **Type:** Schottky Barrier Diode  
- **Maximum Average Forward Current (IF(AV)):** 30A  
- **Peak Forward Surge Current (IFSM):** 300A  
- **Maximum Reverse Voltage (VR):** 50V  
- **Forward Voltage Drop (VF):** Typically 0.55V at 15A  
- **Reverse Leakage Current (IR):** Typically 0.5mA at 50V  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package Type:** TO-220AB  

### **Descriptions:**  
The **SI3050** is a high-performance Schottky barrier diode designed for applications requiring low forward voltage drop and high efficiency. It is commonly used in power rectification, switching power supplies, and reverse polarity protection circuits.  

### **Features:**  
- **Low Forward Voltage Drop:** Ensures minimal power loss.  
- **High Surge Current Capability:** Suitable for demanding applications.  
- **Fast Switching Speed:** Reduces switching losses in high-frequency circuits.  
- **High Temperature Operation:** Reliable performance in harsh environments.  
- **TO-220 Package:** Provides efficient heat dissipation.  

For detailed datasheets or further technical support, refer to the manufacturer's official documentation.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips