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SI2315DS-T1 from VIS

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SI2315DS-T1

Manufacturer: VIS

P-Channel 1.25-W/ 1.8-V (G-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI2315DS-T1,SI2315DST1 VIS 6000 In Stock

Description and Introduction

P-Channel 1.25-W/ 1.8-V (G-S) MOSFET The part **SI2315DS-T1** is manufactured by **Vishay Siliconix (VIS)**.  

### **Specifications:**  
- **Type:** N-Channel MOSFET  
- **Voltage (VDS):** 20V  
- **Current (ID):** 5.7A  
- **RDS(ON) (Max @ VGS):** 30mΩ @ 4.5V, 40mΩ @ 2.5V  
- **Gate Threshold Voltage (VGS(th)):** 0.45V (Min), 1V (Max)  
- **Power Dissipation (PD):** 2.5W  
- **Package:** PowerPAK® SC-70 (SOT-323)  

### **Descriptions and Features:**  
- **Low On-Resistance:** Optimized for power efficiency.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Small Footprint:** SC-70 package for space-constrained designs.  
- **Logic-Level Gate Drive:** Compatible with low-voltage control signals.  
- **Applications:** Power management, load switching, battery protection, DC-DC converters.  

This MOSFET is designed for high-performance, low-voltage applications where efficiency and compact size are critical.

Application Scenarios & Design Considerations

P-Channel 1.25-W/ 1.8-V (G-S) MOSFET

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